Thermal stability of poly-Si phototransistors incorporating Ge quantum dots for near-ultraviolet light detection and amplification

I. H. Chen*, S. S. Tseng, Pei-Wen Li

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

We investigated temperature-dependent (300 K-120 K) subthreshold characteristics and transient photoresponses of poly-Si phototransistors (PTs) incorporating germanium (Ge) quantum dots (QDs) in the gate oxide for near-ultraviolet light detection and amplification. Incorporating Ge QDs into the poly-Si PT structure improves the device thermal stability in the subthreshold characteristics and transient photoresponse, due to better light absorption efficiency and photovoltaic effect suppression.

Original languageEnglish
Pages (from-to)1674-1676
Number of pages3
JournalIEEE Photonics Technology Letters
Volume21
Issue number22
DOIs
StatePublished - 15 Nov 2009

Keywords

  • Germanium (Ge)
  • Phototransistors (PTs)
  • Quantum dots (QDs)

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