Thermal stability of plasma-treated ohmic contacts to n-GaN

Chien Chi Lee, Sheng-Di Lin, Chien Ping Lee*, Meng Hsin Yeh, Wei-I Lee, Cheng Ta Kuo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

In this study, the thermal stability of plasma-treated ohmic contacts by either Cl2/Ar or Ar plasma to n-GaN was investigated by high-temperature aging tests. With proper plasma treatment, ohmic contacts to n-GaN have a lower contact resistance than those without plasma treatment. High-temperature aging tests were performed at temperatures ranging from 400 to 600°C for 2h in N2 or air ambient. No apparent electrical degradation in contact resistance was observed after aging, showing the thermal stability of plasma-treated ohmic contacts is not affected by the recovery of plasma-induced damages on the wafer surface.

Original languageEnglish
Pages (from-to)2313-2315
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number4 B
DOIs
StatePublished - 1 Apr 2003

Keywords

  • GaN
  • High-temperature aging test
  • Ohmic contact
  • Plasma treatment
  • Specific contact resistance
  • Thermal stability

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