Thermal stability of NiSi controlled by post silicidation metal doping method

K. Nagahiro*, K. Tsutsui, T. Shiozawa, R. Xiang, P. Ahmet, K. Kakushima, Y. Okuno, M. Matsumoto, M. Kubota, H. Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

Silicidation process and effects of various kinds of additive metals for the improvement of thermal stability of Ni silicide were examined carefully for the 45 nm node. In order to obtain heat resistant NiSi, introduction of various metal layers introduced to top or bottom (interface of Ni/Si) of Ni on Si were investigated. However, we couldn't have any improvement in the thermal stability by any additive metals introduced. Base on that result, we proposed "post silcidation metal doping" (PSMD) method. As the result of the comprehensive experiments for 7 kinds of the additive metal, it was suggested that the combination of preformed NiSi and Pt or Hf addition is the solution to improve the NiSi thermal stability.

Original languageEnglish
Title of host publicationICSICT-2006
Subtitle of host publication2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
PublisherIEEE Computer Society
Pages466-468
Number of pages3
ISBN (Print)1424401615, 9781424401611
DOIs
StatePublished - 2006
EventICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
Duration: 23 Oct 200626 Oct 2006

Publication series

NameICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Conference

ConferenceICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
CountryChina
CityShanghai
Period23/10/0626/10/06

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