Thermal stability of Ni silicide films on heavily doped n+ and p+ Si substrates

Parhat Ahmet*, Takashi Shiozawa, Koji Nagahiro, Takahiro Nagata, Kuniyuki Kakushima, Kazuo Tsutsui, Toyohiro Chikyow, Hiroshi Iwai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

Electrical and structural properties of Ni silicide films formed at various temperatures ranged from 200 °C to 950 °C on both heavily doped n+ and p+ Si substrates were studied. It was found that surface morphology as well as the sheet resistance properties of the Ni silicide films formed on n+ and p+ Si substrates at the temperatures higher than 600 °C were very different. Agglomerations of Ni silicide films on n+ Si substrates begin to occur at around 600 °C while there is no agglomeration observed in Ni silicide films on p+ Si substrates up to a forming temperature of 700 °C. It was also found that the phase transition temperature from NiSi phase to NiSi2 phase depend on substrate types; 900 °C for NiSi film on n+ Si substrate and 750 °C for NiSi film on p+ Si substrate, respectively. Our results show that the agglomeration is, especially, important factor in the process temperature dependency of the sheet resistance of Ni silicides formed on n+ Si substrates.

Original languageEnglish
Pages (from-to)1642-1646
Number of pages5
JournalMicroelectronic Engineering
Volume85
Issue number7
DOIs
StatePublished - Jul 2008

Keywords

  • Agglomeration
  • Ni silicide
  • Phase transition
  • Sheet resistance
  • Thermal stability

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