Thermal stability of lanthanum oxide/Si(100) interfacial transition layer

H. Nohira; T. Yoshida; H. Okamoto; W. Sakai; K. Nakajima; M. Suzuki; K. Kimura; Ng Jin Aun; Y. Kobayashi; S. Ohmi; H. Iwai; E. Ikenaga; K. Kobayashi; Y. Takata; T. Hattori

Thermal stability of lanthanum oxide/Si(100) interfacial transition layer

H. Nohira^*, T. Yoshida, H. Okamoto, W. Sakai, K. Nakajima, M. Suzuki, K. Kimura, Ng Jin Aun, Y. Kobayashi, S. Ohmi, H. Iwai, E. Ikenaga, K. Kobayashi, Y. Takata, T. Hattori

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Conference article › peer-review

15 Scopus citations

Abstract

The composition and chemical structures of lanthanum oxide/Si(100) system were determined by applying the maximum entropy concept to the angle-resolved Si 1 s and La 3d photoelectron spectra. The results obtained are as follows: The compositional depth profile of lanthanum oxide/Si(100) structure was not affected by the annealing in nitrogen gas under atmospheric pressure at 300°C, while that was affected by the annealing at temperature above 400°C. The analyses of O 1s and Si 1s spectra indicated that the lanthanum silicate was produced by the deposition of lanthanum oxide on Si(100) and the amount of lanthanum silicate increases by the annealing at temperature above 400°C.

Original language	English
Pages (from-to)	87-95
Number of pages	9
Journal	ECS Transactions
Volume	1
Issue number	1
State	Published - 2005
Event	5th International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface - 2005 Fall Meeting of the Electrochemical Society - Los Angeles, CA, United States Duration: 16 Oct 2005 → 20 Oct 2005

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@article{a3e4168343e14b918ac67cdbc854c797,

title = "Thermal stability of lanthanum oxide/Si(100) interfacial transition layer",

abstract = "The composition and chemical structures of lanthanum oxide/Si(100) system were determined by applying the maximum entropy concept to the angle-resolved Si 1 s and La 3d photoelectron spectra. The results obtained are as follows: The compositional depth profile of lanthanum oxide/Si(100) structure was not affected by the annealing in nitrogen gas under atmospheric pressure at 300°C, while that was affected by the annealing at temperature above 400°C. The analyses of O 1s and Si 1s spectra indicated that the lanthanum silicate was produced by the deposition of lanthanum oxide on Si(100) and the amount of lanthanum silicate increases by the annealing at temperature above 400°C.",

author = "H. Nohira and T. Yoshida and H. Okamoto and W. Sakai and K. Nakajima and M. Suzuki and K. Kimura and Aun, {Ng Jin} and Y. Kobayashi and S. Ohmi and H. Iwai and E. Ikenaga and K. Kobayashi and Y. Takata and T. Hattori",

year = "2005",

language = "English",

volume = "1",

pages = "87--95",

journal = "ECS Transactions",

issn = "1938-5862",

publisher = "Electrochemical Society, Inc.",

number = "1",

note = "null ; Conference date: 16-10-2005 Through 20-10-2005",

}

Thermal stability of lanthanum oxide/Si(100) interfacial transition layer. / Nohira, H.; Yoshida, T.; Okamoto, H.; Sakai, W.; Nakajima, K.; Suzuki, M.; Kimura, K.; Aun, Ng Jin; Kobayashi, Y.; Ohmi, S.; Iwai, H.; Ikenaga, E.; Kobayashi, K.; Takata, Y.; Hattori, T.

In: ECS Transactions, Vol. 1, No. 1, 2005, p. 87-95.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Thermal stability of lanthanum oxide/Si(100) interfacial transition layer

AU - Nohira, H.

AU - Yoshida, T.

AU - Okamoto, H.

AU - Sakai, W.

AU - Nakajima, K.

AU - Suzuki, M.

AU - Kimura, K.

AU - Aun, Ng Jin

AU - Kobayashi, Y.

AU - Ohmi, S.

AU - Iwai, H.

AU - Ikenaga, E.

AU - Kobayashi, K.

AU - Takata, Y.

AU - Hattori, T.

PY - 2005

Y1 - 2005

N2 - The composition and chemical structures of lanthanum oxide/Si(100) system were determined by applying the maximum entropy concept to the angle-resolved Si 1 s and La 3d photoelectron spectra. The results obtained are as follows: The compositional depth profile of lanthanum oxide/Si(100) structure was not affected by the annealing in nitrogen gas under atmospheric pressure at 300°C, while that was affected by the annealing at temperature above 400°C. The analyses of O 1s and Si 1s spectra indicated that the lanthanum silicate was produced by the deposition of lanthanum oxide on Si(100) and the amount of lanthanum silicate increases by the annealing at temperature above 400°C.

AB - The composition and chemical structures of lanthanum oxide/Si(100) system were determined by applying the maximum entropy concept to the angle-resolved Si 1 s and La 3d photoelectron spectra. The results obtained are as follows: The compositional depth profile of lanthanum oxide/Si(100) structure was not affected by the annealing in nitrogen gas under atmospheric pressure at 300°C, while that was affected by the annealing at temperature above 400°C. The analyses of O 1s and Si 1s spectra indicated that the lanthanum silicate was produced by the deposition of lanthanum oxide on Si(100) and the amount of lanthanum silicate increases by the annealing at temperature above 400°C.

UR - http://www.scopus.com/inward/record.url?scp=32844459019&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:32844459019

VL - 1

SP - 87

EP - 95

JO - ECS Transactions

JF - ECS Transactions

SN - 1938-5862

IS - 1

Y2 - 16 October 2005 through 20 October 2005

ER -

Thermal stability of lanthanum oxide/Si(100) interfacial transition layer

Abstract

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