Thermal stability of lanthanum oxide/Si(100) interfacial transition layer

H. Nohira*, T. Yoshida, H. Okamoto, W. Sakai, K. Nakajima, M. Suzuki, K. Kimura, Ng Jin Aun, Y. Kobayashi, S. Ohmi, H. Iwai, E. Ikenaga, K. Kobayashi, Y. Takata, T. Hattori

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

15 Scopus citations

Abstract

The composition and chemical structures of lanthanum oxide/Si(100) system were determined by applying the maximum entropy concept to the angle-resolved Si 1 s and La 3d photoelectron spectra. The results obtained are as follows: The compositional depth profile of lanthanum oxide/Si(100) structure was not affected by the annealing in nitrogen gas under atmospheric pressure at 300°C, while that was affected by the annealing at temperature above 400°C. The analyses of O 1s and Si 1s spectra indicated that the lanthanum silicate was produced by the deposition of lanthanum oxide on Si(100) and the amount of lanthanum silicate increases by the annealing at temperature above 400°C.

Original languageEnglish
Pages (from-to)87-95
Number of pages9
JournalECS Transactions
Volume1
Issue number1
StatePublished - 2005
Event5th International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface - 2005 Fall Meeting of the Electrochemical Society - Los Angeles, CA, United States
Duration: 16 Oct 200520 Oct 2005

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