Thermal stability of Gd2O3/Si(100) interfacial transition layer

H. Nohira*, T. Yoshida, H. Okamoto, S. Shinagawa, W. Sakai, K. Nakajima, M. Suzuki, K. Kimura, Ng Jin Aun, Y. Kobayashi, S. Ohmi, H. Iwai, E. Ikenaga, Y. Takata, K. Kobayashi, T. Hattori

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Thermal stability of Gd2O3/Si(100) interfacial transition layer was studied by analyzing the angle-resolved Si 2p and Gd 4d photoelectron spectra. Following results were obtained: The compositional depth profile of Gd2o3/Si(100) changed slightly by post deposition annealing (PDA) in nitrogen gas under atmospheric pressure below 300°C. The analyses of O 1s and Si 2p spectra indicated that the Gd-silicate consisting of Gd-O-Si bonds was produced near the Gd 2O3/Si(100) interface without annealing arid the amount of Gd-silicate increased by PDA above 400°C.

Original languageEnglish
Title of host publicationProceedings - ICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces
Pages273-277
Number of pages5
DOIs
StatePublished - Mar 2006
EventICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces - Aix-en-Provence, France
Duration: 3 Jul 20058 Jul 2005

Publication series

NameJournal De Physique. IV : JP
Volume132
ISSN (Print)1155-4339
ISSN (Electronic)1764-7177

Conference

ConferenceICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces
CountryFrance
CityAix-en-Provence
Period3/07/058/07/05

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