Thermal stability improvement of vertical conducting green resonant-cavity light-emitting diodes on copper substrates

S. Y. Huang; Ray-Hua Horng; P. L. Liu; J. Y. Wu; H. W. Wu; D. S. Wuu

doi:10.1109/LPT.2008.921120

Thermal stability improvement of vertical conducting green resonant-cavity light-emitting diodes on copper substrates

S. Y. Huang^*, Ray-Hua Horng, P. L. Liu, J. Y. Wu, H. W. Wu, D. S. Wuu

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Green light vertical-conducting resonant-cavity light-emitting diodes (RCLEDs) have been fabricated on a Cu substrate by the combination of laser lift-off and plating techniques. The structure of the RCLED/Cu is consisted of the InGaN-GaN multiple-quantum-well active layer between three layers of the dielectric TiO ₂ -SiO ₂ distributed Bragg reflector as a top mirror and an Al metal layer as a bottom mirror. It was found that the RCLED with Cu substrate presents superior thermal dissipation and a stable electroluminescence emission peak wavelength (∼507 nm) under a high injection current. It is attributed to the Cu substrate providing a good heat sink and effectively reducing the junction temperature.

Original language	English
Pages (from-to)	797-799
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	20
Issue number	10
DOIs	https://doi.org/10.1109/LPT.2008.921120
State	Published - 15 May 2008

Keywords

InGaN
Junction temperature
Laser lift-off (LLO)
Resonant-cavity light-emitting diode (RCLED)

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10.1109/LPT.2008.921120

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title = "Thermal stability improvement of vertical conducting green resonant-cavity light-emitting diodes on copper substrates",

abstract = " Green light vertical-conducting resonant-cavity light-emitting diodes (RCLEDs) have been fabricated on a Cu substrate by the combination of laser lift-off and plating techniques. The structure of the RCLED/Cu is consisted of the InGaN-GaN multiple-quantum-well active layer between three layers of the dielectric TiO 2 -SiO 2 distributed Bragg reflector as a top mirror and an Al metal layer as a bottom mirror. It was found that the RCLED with Cu substrate presents superior thermal dissipation and a stable electroluminescence emission peak wavelength (∼507 nm) under a high injection current. It is attributed to the Cu substrate providing a good heat sink and effectively reducing the junction temperature.",

keywords = "InGaN, Junction temperature, Laser lift-off (LLO), Resonant-cavity light-emitting diode (RCLED)",

author = "Huang, {S. Y.} and Ray-Hua Horng and Liu, {P. L.} and Wu, {J. Y.} and Wu, {H. W.} and Wuu, {D. S.}",

year = "2008",

month = may,

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doi = "10.1109/LPT.2008.921120",

language = "English",

volume = "20",

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journal = "IEEE Photonics Technology Letters",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Thermal stability improvement of vertical conducting green resonant-cavity light-emitting diodes on copper substrates

AU - Huang, S. Y.

AU - Horng, Ray-Hua

AU - Liu, P. L.

AU - Wu, J. Y.

AU - Wu, H. W.

AU - Wuu, D. S.

PY - 2008/5/15

Y1 - 2008/5/15

N2 - Green light vertical-conducting resonant-cavity light-emitting diodes (RCLEDs) have been fabricated on a Cu substrate by the combination of laser lift-off and plating techniques. The structure of the RCLED/Cu is consisted of the InGaN-GaN multiple-quantum-well active layer between three layers of the dielectric TiO 2 -SiO 2 distributed Bragg reflector as a top mirror and an Al metal layer as a bottom mirror. It was found that the RCLED with Cu substrate presents superior thermal dissipation and a stable electroluminescence emission peak wavelength (∼507 nm) under a high injection current. It is attributed to the Cu substrate providing a good heat sink and effectively reducing the junction temperature.

AB - Green light vertical-conducting resonant-cavity light-emitting diodes (RCLEDs) have been fabricated on a Cu substrate by the combination of laser lift-off and plating techniques. The structure of the RCLED/Cu is consisted of the InGaN-GaN multiple-quantum-well active layer between three layers of the dielectric TiO 2 -SiO 2 distributed Bragg reflector as a top mirror and an Al metal layer as a bottom mirror. It was found that the RCLED with Cu substrate presents superior thermal dissipation and a stable electroluminescence emission peak wavelength (∼507 nm) under a high injection current. It is attributed to the Cu substrate providing a good heat sink and effectively reducing the junction temperature.

KW - InGaN

KW - Junction temperature

KW - Laser lift-off (LLO)

KW - Resonant-cavity light-emitting diode (RCLED)

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