Thermal stability improvement of vertical conducting green resonant-cavity light-emitting diodes on copper substrates

S. Y. Huang*, Ray-Hua Horng, P. L. Liu, J. Y. Wu, H. W. Wu, D. S. Wuu

*Corresponding author for this work

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

Green light vertical-conducting resonant-cavity light-emitting diodes (RCLEDs) have been fabricated on a Cu substrate by the combination of laser lift-off and plating techniques. The structure of the RCLED/Cu is consisted of the InGaN-GaN multiple-quantum-well active layer between three layers of the dielectric TiO 2 -SiO 2 distributed Bragg reflector as a top mirror and an Al metal layer as a bottom mirror. It was found that the RCLED with Cu substrate presents superior thermal dissipation and a stable electroluminescence emission peak wavelength (∼507 nm) under a high injection current. It is attributed to the Cu substrate providing a good heat sink and effectively reducing the junction temperature.

Original languageEnglish
Pages (from-to)797-799
Number of pages3
JournalIEEE Photonics Technology Letters
Volume20
Issue number10
DOIs
StatePublished - 15 May 2008

Keywords

  • InGaN
  • Junction temperature
  • Laser lift-off (LLO)
  • Resonant-cavity light-emitting diode (RCLED)

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