Abstract
Green light vertical-conducting resonant-cavity light-emitting diodes (RCLEDs) have been fabricated on a Cu substrate by the combination of laser lift-off and plating techniques. The structure of the RCLED/Cu is consisted of the InGaN-GaN multiple-quantum-well active layer between three layers of the dielectric TiO 2 -SiO 2 distributed Bragg reflector as a top mirror and an Al metal layer as a bottom mirror. It was found that the RCLED with Cu substrate presents superior thermal dissipation and a stable electroluminescence emission peak wavelength (∼507 nm) under a high injection current. It is attributed to the Cu substrate providing a good heat sink and effectively reducing the junction temperature.
Original language | English |
---|---|
Pages (from-to) | 797-799 |
Number of pages | 3 |
Journal | IEEE Photonics Technology Letters |
Volume | 20 |
Issue number | 10 |
DOIs | |
State | Published - 15 May 2008 |
Keywords
- InGaN
- Junction temperature
- Laser lift-off (LLO)
- Resonant-cavity light-emitting diode (RCLED)