Thermal stability improvement of NiSi on gate by high dosage Germanium implantation

Chih Ming Hsieh*, Bing-Yue Tsui, Yu Ren Hung, York Yang, Ryan Shen, Sam Cheng, Tony Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The thermal stability of nickel silicide (NiSi) on source/drain and gate is one of the important research topics in complementary metal oxide semiconductor technology. Here we report the effects of germanium-ion implantation (GeII) on the thermal stability of NiSi on poly-Si gates. Scanning electron microscope inspections and thin-film X-ray diffraction results show that agglomeration and Ni Si2 transformation can be suppressed by high dosage Ge implanted on poly-Si gates. The allowable process temperature of NiSi formation can be increased by 100°C.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume12
Issue number6
DOIs
StatePublished - 20 Apr 2009

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