Thermal-stability improvement of LaON thin film formed using nitrogen radicals

S. Sato*, K. Tachi, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai

*Corresponding author for this work

Research output: Contribution to journalArticle

10 Scopus citations

Abstract

This work reports the influence of nitridation on structural and electrical properties of La2O3 gate dielectric films. The issue of La2O3 is EOT increase after high temperature post metarization annealing (PMA). To overcome this problem, we incorporated nitrogen in La2O3. The EOT increase on the TaN/LaON and W/LaON structure is reduced compared with that on the W/La2O3 structure. This is due to nitrogen in LaON and SiNx-rich interfacial layer which seems to remain after high temperature annealing. W/LaON nMOSFET is also successfully fabricated. Peak electron mobility of 96.2 cm2/V s was obtained.

Original languageEnglish
Pages (from-to)1894-1897
Number of pages4
JournalMicroelectronic Engineering
Volume84
Issue number9-10
DOIs
StatePublished - Sep 2007

Keywords

  • EOT
  • Lanthanum oxide
  • Lanthanum oxynitride
  • MOSFET
  • Nitrogen radical

Fingerprint Dive into the research topics of 'Thermal-stability improvement of LaON thin film formed using nitrogen radicals'. Together they form a unique fingerprint.

  • Cite this

    Sato, S., Tachi, K., Kakushima, K., Ahmet, P., Tsutsui, K., Sugii, N., Hattori, T., & Iwai, H. (2007). Thermal-stability improvement of LaON thin film formed using nitrogen radicals. Microelectronic Engineering, 84(9-10), 1894-1897. https://doi.org/10.1016/j.mee.2007.04.088