Thermal reliability of Pt/Ti/Pt/Au Schottky contact on InP with a GalnP Schottky barrier enhancement layer

Hao-Chung Kuo*, Chun-Hsiung Lin, B. C. Moser, H. Hsia, Z. Tang, Haydn Chen, M. Feng, G. E. Stillman

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We present the studies of the thermal stability of various metal including Au, Ti, Pt, Pd and Pt/Ti/Pt/Au Schottky contacts on strained Ga0.2In0.8P/InP semiconductors. Auger electron spectroscopy (AES) analysis and cross-sectional TEM of the thermally annealed Schottky diode were performed to investigate the failure mechanism. For Pt/Ti/Pt/Au schottky contacts on strained GalnP/InP, no significant change was found for samples annealed up to 350°C. However, a drastic degradation of the barrier height and the ideality factor was observed in samples annealed at 400°C, which may be caused by the interdiffusion and penetration of metals into the semiconductor. Finally InGaAs/InP doped channel heterojunction FET's (DC-HFET's) with a GaInP Schottky barrier enhancement layer (SBEL) were grown and fabricated. The 0.25 μm gate-length devices showed excellent DC and RF performance, with an ft of 117 GHz and an fmax of 168 GHz.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages231-236
Number of pages6
ISBN (Print)1558994416, 9781558994416
DOIs
StatePublished - 1 Dec 1999
EventProceedings of the 1998 MRS Fall Meeting - Symposium D: 'Integration of Dissimilar Materials in Micro- and Optoelectronics - Symposium I: 'III-V and SiGe Group IV Device/IC Processing Challeneges for Commercial Applications' - Boston, MA, USA
Duration: 30 Nov 19983 Dec 1998

Publication series

NameMaterials Research Society Symposium - Proceedings
Volume535
ISSN (Print)0272-9172

Conference

ConferenceProceedings of the 1998 MRS Fall Meeting - Symposium D: 'Integration of Dissimilar Materials in Micro- and Optoelectronics - Symposium I: 'III-V and SiGe Group IV Device/IC Processing Challeneges for Commercial Applications'
CityBoston, MA, USA
Period30/11/983/12/98

Fingerprint Dive into the research topics of 'Thermal reliability of Pt/Ti/Pt/Au Schottky contact on InP with a GalnP Schottky barrier enhancement layer'. Together they form a unique fingerprint.

Cite this