Thermal management design from chip to package for high power InGaN/sapphire LEDs applications

Ray-Hua Horng; C. C. Chiang; D. S. Wuu; H. I. Lin; Y. L. Tsai

doi:10.1149/1.2983165

Thermal management design from chip to package for high power InGaN/sapphire LEDs applications

Ray-Hua Horng, C. C. Chiang, D. S. Wuu, H. I. Lin, Y. L. Tsai

Institute of Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

The optical and thermal properties of blue InGaN/sapphire LEDs with a novel structure design for heat dissipation is investigated. The LED chip is designed to directly contact with a cup-shaped Cu heat spreader, and then mounted on a heat sink coated with a diamond-like film. The packaged LED chip with the novel heat dissipation design demonstrates superior light output power and reduced junction temperature as compared with the same LED chip packaged using conventional process.

Original language	English
Title of host publication	ECS Transactions - State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9
Pages	111-115
Number of pages	5
Edition	7
DOIs	https://doi.org/10.1149/1.2983165
State	Published - 1 Dec 2008
Event	State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9 - 214th ECS Meeting - Honolulu, HI, United States Duration: 12 Oct 2008 → 17 Oct 2008

Publication series

Name	ECS Transactions
Number	7
Volume	16
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9 - 214th ECS Meeting
Country	United States
City	Honolulu, HI
Period	12/10/08 → 17/10/08

Access to Document

10.1149/1.2983165

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Horng, R-H., Chiang, C. C., Wuu, D. S., Lin, H. I., & Tsai, Y. L. (2008). Thermal management design from chip to package for high power InGaN/sapphire LEDs applications. In ECS Transactions - State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9 (7 ed., pp. 111-115). (ECS Transactions; Vol. 16, No. 7). https://doi.org/10.1149/1.2983165

Horng, Ray-Hua ; Chiang, C. C. ; Wuu, D. S. ; Lin, H. I. ; Tsai, Y. L. / Thermal management design from chip to package for high power InGaN/sapphire LEDs applications. ECS Transactions - State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9. 7. ed. 2008. pp. 111-115 (ECS Transactions; 7).

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abstract = "The optical and thermal properties of blue InGaN/sapphire LEDs with a novel structure design for heat dissipation is investigated. The LED chip is designed to directly contact with a cup-shaped Cu heat spreader, and then mounted on a heat sink coated with a diamond-like film. The packaged LED chip with the novel heat dissipation design demonstrates superior light output power and reduced junction temperature as compared with the same LED chip packaged using conventional process.",

author = "Ray-Hua Horng and Chiang, {C. C.} and Wuu, {D. S.} and Lin, {H. I.} and Tsai, {Y. L.}",

year = "2008",

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Horng, R-H, Chiang, CC, Wuu, DS, Lin, HI & Tsai, YL 2008, Thermal management design from chip to package for high power InGaN/sapphire LEDs applications. in ECS Transactions - State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9. 7 edn, ECS Transactions, no. 7, vol. 16, pp. 111-115, State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9 - 214th ECS Meeting, Honolulu, HI, United States, 12/10/08. https://doi.org/10.1149/1.2983165

Thermal management design from chip to package for high power InGaN/sapphire LEDs applications. / Horng, Ray-Hua; Chiang, C. C.; Wuu, D. S.; Lin, H. I.; Tsai, Y. L.

ECS Transactions - State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9. 7. ed. 2008. p. 111-115 (ECS Transactions; Vol. 16, No. 7).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Thermal management design from chip to package for high power InGaN/sapphire LEDs applications

AU - Horng, Ray-Hua

AU - Chiang, C. C.

AU - Wuu, D. S.

AU - Lin, H. I.

AU - Tsai, Y. L.

PY - 2008/12/1

Y1 - 2008/12/1

N2 - The optical and thermal properties of blue InGaN/sapphire LEDs with a novel structure design for heat dissipation is investigated. The LED chip is designed to directly contact with a cup-shaped Cu heat spreader, and then mounted on a heat sink coated with a diamond-like film. The packaged LED chip with the novel heat dissipation design demonstrates superior light output power and reduced junction temperature as compared with the same LED chip packaged using conventional process.

AB - The optical and thermal properties of blue InGaN/sapphire LEDs with a novel structure design for heat dissipation is investigated. The LED chip is designed to directly contact with a cup-shaped Cu heat spreader, and then mounted on a heat sink coated with a diamond-like film. The packaged LED chip with the novel heat dissipation design demonstrates superior light output power and reduced junction temperature as compared with the same LED chip packaged using conventional process.

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M3 - Conference contribution

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T3 - ECS Transactions

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BT - ECS Transactions - State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9

Y2 - 12 October 2008 through 17 October 2008

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Horng R-H, Chiang CC, Wuu DS, Lin HI, Tsai YL. Thermal management design from chip to package for high power InGaN/sapphire LEDs applications. In ECS Transactions - State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9. 7 ed. 2008. p. 111-115. (ECS Transactions; 7). https://doi.org/10.1149/1.2983165