Thermal flow and chemical shrink techniques for sub-100 nm contact hole fabrication in electron beam lithography

Hsuen Li Chen*, Fu-Hsiang Ko, Lung Sheng Li, Chien Kui Hsu, Ben Chang Chen, Tieh Chi Chu

*Corresponding author for this work

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

The application of high-resolution electron beam lithography to positive chemically amplified deep ultraviolet (UV) and electron beam resists has been developed. In general, deep UV resists are not suitable for resolving sub-100 nm problems except for the case of strict process control. We demonstrated thermal flow and chemical shrink techniques for sub-100 nm contact hole fabrication in electron beam lithography. The 200 nm contact hole resist patterns could easily be shrunk to less than 80 nm after a simple thermal flow procedure on a hot plate. The effects of thermal flow temperature and time period were evaluated. For the chemical shrink method, critical parameters of greatest influence, such as mixing bake temperature, baking time and initial hole size were discussed. After suitable chemical shrink, a hole dimension of 75 nm was obtained. The thermal process window for the thermal flow method was narrower than that for the chemical shrink method for sub-100 nm contact hole fabrication by electron beam lithography.

Original languageEnglish
Pages (from-to)4163-4166
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume41
Issue number6 B
DOIs
StatePublished - 1 Jun 2002

Keywords

  • Chemical shrink method
  • Chemically amplified resist
  • Contact hole fabrication
  • Electron beam lithography
  • Thermal flow method

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