Thermal effect of GaN-based light-emitting diodes with CdSe/ZnS quantum dots

K. J. Chen*, H. C. Chen, C. W. Hung, C. H. Wang, M. H. Shih, Hao-Chung Kuo, Chien-Chung Lin

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Thermal effect of GaN-based light-emitting diodes with CdSe/ZnS quantum dots is investigated. Phosphor conversion efficiency and junction temperature were studied to understand thermal properties under different injected currents and environmental temperatures.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011
Pages1865-1866
Number of pages2
StatePublished - 1 Dec 2011
EventConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011 - Sydney, Australia
Duration: 28 Aug 20111 Sep 2011

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Conference

ConferenceConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011
CountryAustralia
CitySydney
Period28/08/111/09/11

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