Thermal conductivity of silicon nanowire using landauer approach for thermoelectric applications

Ming Yi Lee*, Min Hui Chuang, Yi-Ming Li, Seiji Samukawa

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The electronic and phononic band structure of silicon nanowires embedded in SiGeo.3 is calculated and used to investigate its effect on the thermoelectric properties by Landauer approach. The contribution from elec-Tron/hole on power factor and electronic thermal con-ductance is less than that from phonons on lattice ther-mal conductance.

Original languageEnglish
Title of host publicationProceedings of 2019 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019
EditorsFrancesco Driussi
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728109404
DOIs
StatePublished - Sep 2019
Event24th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019 - Udine, Italy
Duration: 4 Sep 20196 Sep 2019

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Volume2019-September

Conference

Conference24th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019
CountryItaly
CityUdine
Period4/09/196/09/19

Keywords

  • Landauer Approach
  • Silicon Nanowire
  • Ther-moelectric

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