Thermal behavior of sapphire-based InGaN light-emitting diodes with cap-shaped copper-diamond substrates

Ray-Hua Horng*, Hung Lieh Hu, Re Ching Lin, Kun Cheng Peng, Yi Chen Chiang

*Corresponding author for this work

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

Light-emitting diode (LED) packages with various heat spreaders were developed to examine the heat dissipation property of sapphire-based LEDs. A cap-shaped copper-diamond sheet was fabricated by composite electroplating and directly contacted to the sapphire surface to enhance heat dissipation from the chip. The thermal diffusivity of the copper-diamond sheet was 0.7179 cm 2/s, as measured using the laser-flash method. LEDs with the copper-diamond sheet presents low surface temperature (49C at 700 mA injecting current) and low thermal resistance (5.8 K/W). These findings suggest that the copper-diamond sheet helped reduce LED thermal resistance, and thereby prevented heat accumulation. The LED package also exhibited high light output power.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume14
Issue number5
DOIs
StatePublished - 16 Mar 2011

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