Thermal behavior of Al and Al-3 at. % Ge thin films on Si wafers

B. S. Lim*, W. C. Pritchet, K. P. Rodbell, King-Ning Tu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The mechanical stresses of a pure Al film and a low-thermal-expansion Al-3 at. % Ge thin film on (100) Si wafers are measured and compared in the temperature range of room temperature to 400 °C by the vibrating membrane method. The results are discussed including the comparison with those obtained by the popular wafer bending method. It was found that the chemical reaction between the Al and the Si substrate affects the mechanical stress. The relatively low stress in the Al(Ge) film is due to the interference of Ge precipitation. The relatively slow relaxation in the Al film during annealing may be caused by the dissolution of Si into Al.

Original languageEnglish
Pages (from-to)2945-2947
Number of pages3
JournalJournal of Applied Physics
Volume74
Issue number4
DOIs
StatePublished - 1 Dec 1993

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