Thermal annealing effect on material characterizations of β-Ga 2O3 epilayer grown by metal organic chemical vapor deposition

Chiung Yi Huang, Ray-Hua Horng*, Dong Sing Wuu, Li Wei Tu, Hsiang Shun Kao

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

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Abstract

In this work, a single-crystalline β-Ga2O3 epilayer was grown on (0001) sapphire at low temperature by low-pressure metal organic chemical vapor deposition. The optimized parameters for the chamber pressure, oxygen flow, and growth temperature were 15 Torr, 200 sccm, and 500 °C, respectively. The β-Ga2O3 epilayer was fabricated as a metal-semiconductor-metal solar-blind deep ultraviolet photodetector. Due to the gallium oxide grown at low temperature, the as-grown β-Ga2O3 epilayer was annealed at 800 °C in atmosphere or in a nitrogen environment. The effects of defects of the β-Ga2O3 epilayer before and after N2 annealing were studied using x-ray diffraction system, cathodoluminescence at differential temperature, and Hall measurement. The β-Ga2O 3 epilayer that was N2 annealed for 15 min presented better photodetector performance than the as-grown β-Ga2O 3 epilayer. The annealed epilayer exhibited a dark current of 1.6 × 10-13 A under 5 V bias.

Original languageEnglish
Article number011119
JournalApplied Physics Letters
Volume102
Issue number1
DOIs
StatePublished - 7 Jan 2013

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