Thermal annealing effect of indium tin oxide contact to GaN light-emitting diodes

Chin Yuan Hsu, Wen How Lan*, Yew-Chuhg Wu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

We have fabricated GaN-based light-emitting diodes (LEDs) using transparent indium tin oxide (ITO) for p-type contacts. The current-voltage (I-V) characteristics of the devices have been studied. When annealed at 700°C, the p-n junction of the diodes became very leaky, and even electrical short circuits have been observed. According to scanning electron microscopy (SEM) and energy-dispersive X-ray spectrometer analyses (EDS), it was found that indium (In) diffused into the LED structure with defects such as threading dislocations (TDs) or V-pits. The defects provide leakage paths to cause short circuits in p-n junctions at high annealing temperatures.

Original languageEnglish
Pages (from-to)7424-7426
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number10
DOIs
StatePublished - 11 Oct 2005

Keywords

  • Dislocation
  • GaN
  • ITO contact
  • Leakage
  • LEDs

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