Thermal analysis of the fusion limits of metal interconnect under short duration current pulses

Kaustav Banerjee; Sven Rzepka; Ajith Amerasekera; Nathan Cheung; Chen-Ming Hu

doi:10.1109/IRWS.1996.583392

Thermal analysis of the fusion limits of metal interconnect under short duration current pulses

Kaustav Banerjee^*, Sven Rzepka, Ajith Amerasekera, Nathan Cheung, Chen-Ming Hu

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to conference › Paper › peer-review

7 Scopus citations

Abstract

Thermal analysis of the fusion limits of the IC metal under short duration current pulses has been performed using a quadruple level TiN/AlCu/TiN metallization system. A finite element (FE) simulation program has been calibrated to analyze the thermal effects in detail. The program can be used to predict self heating under DC and transient current conditions for various metal levels, geometries and current loading conditions. It is shown both experimentally and using FE simulations that the metal temperatures rise past 1000 °C before open circuit failure under short duration current pulses. The critical failure current is strongly influenced by the metal thickness, thermal capacity and pulse width. Further, it is shown that the ratio of the critical energy causing open circuit conditions (fusion limit), to the theoretical melt energy increases with scaling. As a result, narrower metal lines can sustain higher current densities before failure.

Original language	English
Pages	98-102
Number of pages	5
DOIs	https://doi.org/10.1109/IRWS.1996.583392
State	Published - 1 Dec 1996
Event	Proceedings of the 1996 International Integrated Reliability Workshop - Lake Tahoe, CA, USA Duration: 20 Oct 1996 → 23 Oct 1996

Conference

Conference	Proceedings of the 1996 International Integrated Reliability Workshop
City	Lake Tahoe, CA, USA
Period	20/10/96 → 23/10/96

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10.1109/IRWS.1996.583392

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abstract = "Thermal analysis of the fusion limits of the IC metal under short duration current pulses has been performed using a quadruple level TiN/AlCu/TiN metallization system. A finite element (FE) simulation program has been calibrated to analyze the thermal effects in detail. The program can be used to predict self heating under DC and transient current conditions for various metal levels, geometries and current loading conditions. It is shown both experimentally and using FE simulations that the metal temperatures rise past 1000 °C before open circuit failure under short duration current pulses. The critical failure current is strongly influenced by the metal thickness, thermal capacity and pulse width. Further, it is shown that the ratio of the critical energy causing open circuit conditions (fusion limit), to the theoretical melt energy increases with scaling. As a result, narrower metal lines can sustain higher current densities before failure.",

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Thermal analysis of the fusion limits of metal interconnect under short duration current pulses. / Banerjee, Kaustav; Rzepka, Sven; Amerasekera, Ajith; Cheung, Nathan; Hu, Chen-Ming.

1996. 98-102 Paper presented at Proceedings of the 1996 International Integrated Reliability Workshop, Lake Tahoe, CA, USA, .

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Thermal analysis of the fusion limits of metal interconnect under short duration current pulses

AU - Banerjee, Kaustav

AU - Rzepka, Sven

AU - Amerasekera, Ajith

AU - Cheung, Nathan

AU - Hu, Chen-Ming

PY - 1996/12/1

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N2 - Thermal analysis of the fusion limits of the IC metal under short duration current pulses has been performed using a quadruple level TiN/AlCu/TiN metallization system. A finite element (FE) simulation program has been calibrated to analyze the thermal effects in detail. The program can be used to predict self heating under DC and transient current conditions for various metal levels, geometries and current loading conditions. It is shown both experimentally and using FE simulations that the metal temperatures rise past 1000 °C before open circuit failure under short duration current pulses. The critical failure current is strongly influenced by the metal thickness, thermal capacity and pulse width. Further, it is shown that the ratio of the critical energy causing open circuit conditions (fusion limit), to the theoretical melt energy increases with scaling. As a result, narrower metal lines can sustain higher current densities before failure.

AB - Thermal analysis of the fusion limits of the IC metal under short duration current pulses has been performed using a quadruple level TiN/AlCu/TiN metallization system. A finite element (FE) simulation program has been calibrated to analyze the thermal effects in detail. The program can be used to predict self heating under DC and transient current conditions for various metal levels, geometries and current loading conditions. It is shown both experimentally and using FE simulations that the metal temperatures rise past 1000 °C before open circuit failure under short duration current pulses. The critical failure current is strongly influenced by the metal thickness, thermal capacity and pulse width. Further, it is shown that the ratio of the critical energy causing open circuit conditions (fusion limit), to the theoretical melt energy increases with scaling. As a result, narrower metal lines can sustain higher current densities before failure.

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Thermal analysis of the fusion limits of metal interconnect under short duration current pulses

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