Thermal analysis of the fusion limits of metal interconnect under short duration current pulses

Kaustav Banerjee*, Sven Rzepka, Ajith Amerasekera, Nathan Cheung, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to conferencePaper

7 Scopus citations

Abstract

Thermal analysis of the fusion limits of the IC metal under short duration current pulses has been performed using a quadruple level TiN/AlCu/TiN metallization system. A finite element (FE) simulation program has been calibrated to analyze the thermal effects in detail. The program can be used to predict self heating under DC and transient current conditions for various metal levels, geometries and current loading conditions. It is shown both experimentally and using FE simulations that the metal temperatures rise past 1000 °C before open circuit failure under short duration current pulses. The critical failure current is strongly influenced by the metal thickness, thermal capacity and pulse width. Further, it is shown that the ratio of the critical energy causing open circuit conditions (fusion limit), to the theoretical melt energy increases with scaling. As a result, narrower metal lines can sustain higher current densities before failure.

Original languageEnglish
Pages98-102
Number of pages5
DOIs
StatePublished - 1 Dec 1996
EventProceedings of the 1996 International Integrated Reliability Workshop - Lake Tahoe, CA, USA
Duration: 20 Oct 199623 Oct 1996

Conference

ConferenceProceedings of the 1996 International Integrated Reliability Workshop
CityLake Tahoe, CA, USA
Period20/10/9623/10/96

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    Banerjee, K., Rzepka, S., Amerasekera, A., Cheung, N., & Hu, C-M. (1996). Thermal analysis of the fusion limits of metal interconnect under short duration current pulses. 98-102. Paper presented at Proceedings of the 1996 International Integrated Reliability Workshop, Lake Tahoe, CA, USA, . https://doi.org/10.1109/IRWS.1996.583392