Thermal analysis and electrical performance of packaged AlGaN/GaN power HEMTs

Po Chien Chou, Stone Cheng, Wei-Hua Chieng, Edward Yi Chang, Hsin Ping Chou

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

This work presents thermal resistance constitution evaluation and electrical experiments for AlGaN/GaN HEMTs packaging device. The investigation of thermal resistance is based on the closed-form expression heat transfer model. Actual multi-fingers structure and thermal resistance was modeled. The Infrared thermography is utilized to observe heat distribution of the packaged GaN device by measuring the temperature of the active region in the operation. The simulation result is verified by comparing with experimental observations. The total thermal resistance is 134.42 K/W by calculation while that is 145.77 K/W by simulation. The self-heating effect under switching operation is verified by IR image. The simulation process is calibrated against measurement data of a actual device and provides good predictive results for the DC characteristics.

Original languageEnglish
Title of host publication2013 IEEE 10th International Conference on Power Electronics and Drive Systems, PEDS 2013
Pages517-520
Number of pages4
DOIs
StatePublished - 1 Aug 2013
Event2013 IEEE 10th International Conference on Power Electronics and Drive Systems, PEDS 2013 - Kitakyushu, Japan
Duration: 22 Apr 201325 Apr 2013

Publication series

NameProceedings of the International Conference on Power Electronics and Drive Systems

Conference

Conference2013 IEEE 10th International Conference on Power Electronics and Drive Systems, PEDS 2013
CountryJapan
CityKitakyushu
Period22/04/1325/04/13

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