Theory of workfunction control of silicides by doping for future Si-Nano-devices based on fundamental physics of why silicides exist in nature

T. Nakayama*, K. Kakushima, O. Nakatsuka, Y. Machida, S. Sotome, T. Matsuki, K. Ohmori, H. Iwai, S. Zaima, T. Chikyow, K. Shiraishi, K. Yamada

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We have revealed by the first-principles calculations that the workfunction of silicide is controlled by the high-density dopant existing in the silicide itself, and the selective doping into Si or Ni site is essential to realize such control. In addition, we showed that these doping properties are closely related to fundamental physics of silicides; why NixSiy exists and why AuxSiy not exists in nature. These findings might give a new guideline to design silicide-electrode contacts for future 10nm nano-devices.

Original languageEnglish
Title of host publication2010 IEEE International Electron Devices Meeting, IEDM 2010
Pages15.5.1-15.5.4
DOIs
StatePublished - 2010
Event2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States
Duration: 6 Dec 20108 Dec 2010

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference2010 IEEE International Electron Devices Meeting, IEDM 2010
CountryUnited States
CitySan Francisco, CA
Period6/12/108/12/10

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    Nakayama, T., Kakushima, K., Nakatsuka, O., Machida, Y., Sotome, S., Matsuki, T., Ohmori, K., Iwai, H., Zaima, S., Chikyow, T., Shiraishi, K., & Yamada, K. (2010). Theory of workfunction control of silicides by doping for future Si-Nano-devices based on fundamental physics of why silicides exist in nature. In 2010 IEEE International Electron Devices Meeting, IEDM 2010 (pp. 15.5.1-15.5.4). [5703369] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2010.5703369