Theory of resonant states of hydrogenic impurities in quantum wells

Shun-Tung Yen*

*Corresponding author for this work

Research output: Contribution to journalArticle

13 Scopus citations

Abstract

The binding energy and the density-of-states spectrum of resonant impurity states in quantum well structure have been theoretically studied with variation of the impurity position taken into account, using the multisubband model and the resolvent operator technique. Calculations for the 2p0 resonant state in a GaAs-Al0.2Ga0.8As quantum well have been performed. It has been found that there can be a considerable resonant coupling in the 2p0 state, causing a ∼0.1 ps capture or escape time of electrons between the 2p0 localized state and the first subband states. The maximum shift of the impurity energy is in general of the order of 0.1 meV, much smaller than the maximum binding energy of the 2p0 state.

Original languageEnglish
Article number075340
Pages (from-to)1-7
Number of pages7
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume66
Issue number7
DOIs
StatePublished - 15 Aug 2002

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