Theoretical studies of displacement deposition of nickel into porous silicon with ultrahigh aspect ratio

Chengkun Xu*, Mingheng Li, Xi Zhang, King-Ning Tu, Yahong Xie

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations


A model is developed to address the uniformity of displacement deposition of nickel inside porous silicon with an ultrahigh aspect ratio as high as 200. The nickel distribution is treated as a current distribution issue as in electrodeposition. It is shown that the deposition distribution along the pore depth exhibits a strong dependence on a polarization parameter ξ. High values of ξ correspond to mass transport limitations and lead to non-uniform distributions, whereas small ξ values, representing interfacial reaction control, produce uniform distributions. Non-uniform deposition primarily occurs at an initial stage in which the reaction is dominated by mass transfer. As the deposition process continues, the deposition rate drops to a low value, and the deposition uniformity shifts from Ni2+ mass transport limitations to its interfacial reaction control, leading to uniform Ni2+ concentration and deposition rate distributions. It is predicted that the non-uniformity at the initial stage could be remedied by increasing the bulk concentration of the nickel ions and decreasing the plating bath pH. In addition, the uniformity of the deposition distribution can be significantly improved by introducing inhibiting additive coumarin to the plating solution.

Original languageEnglish
Pages (from-to)3901-3909
Number of pages9
JournalElectrochimica Acta
Issue number12
StatePublished - 10 Mar 2007


  • Current distribution
  • Deposition uniformity
  • Displacement deposition
  • Nickel plating
  • Porous silicon

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