Theoretical Investigation of DIBL Characteristics for Scaled Tri-Gate InGaAs-OI n-MOSFETs Including Sensitivity to Process Variations

Shu Hua Wu, Chien Lin Yu, Chang Hung Yu, Pin Su*

*Corresponding author for this work

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

This paper investigates the intrinsic drain-induced barrier lowering (DIBL) characteristics of highly-scaled tri-gate n-MOSFETs with InGaAs channel based on ITRS 2021 technology node through numerical simulation corroborated with theoretical calculation. This paper indicates that, when studying short-channel effects in III-V FETs, one has to account for quantum-confinement, or else predictions will be pessimistic. Due to 2-D quantum-confinement, the DIBL of the InGaAs tri-gate devices can be significantly suppressed and be comparable to the Si counterpart. Besides, for highly-scaled InGaAs tri-gate NFETs, the impact of buried-oxide thickness on DIBL becomes minor, and the DIBL sensitivity to the fin-width and gate-length variations can also be suppressed by the quantum-confinement effect. This paper may provide insights for tri-gate device design using III-V high-mobility channel materials.

Original languageEnglish
Article number7744544
Pages (from-to)45-52
Number of pages8
JournalIEEE Journal of the Electron Devices Society
Volume5
Issue number1
DOIs
StatePublished - 1 Jan 2017

Keywords

  • III-V channel
  • drain-induced barrier lowering (DIBL)
  • process variation
  • quantum confinement
  • tri-gate MOSFET

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