Theoretical and experimental analysis of temperature-insensitive 655-nm resonant-cavity LEDs

Jun Rong Chen, Yi An Chang, Hao-Chung Kuo*, Tien-chang Lu, Yen Kuang Kuo, Shing Chung Wang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Visible InGaP/InGaAlP resonant-cavity light-emitting diodes with low temperature sensitivity output characteristics were demonstrated. By means of extending the resonant cavity to a thickness of three wavelength (3 λ), the degree of power variation between 25 and 95 °C for the devices biased at 20 mA was apparently reduced from -2.1 dB for the standard structure design (1-λ cavity) to -0.6 dB. Numerical simulation showed that the insensitive temperature dependence of output characteristics was attributed to the reduced electron leakage current.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007
PublisherOptical Society of America
ISBN (Print)1424411742, 9781424411740
DOIs
StatePublished - 1 Jan 2007
EventConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007 - Seoul, Korea, Republic of
Duration: 26 Aug 200726 Aug 2007

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Conference

ConferenceConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007
CountryKorea, Republic of
CitySeoul
Period26/08/0726/08/07

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