GaN is the suitable material for millimeter-wave high power IMPATT oscillators because of its superior electronic properties - high breakdown electric fields and high electron saturation velocity. In this paper, millimeter-wave wurtzite phase and zincblende phase GaN IMPATT oscillators at elevated temperature are analyzed by a Read type large signal model. The power density of GaN IMPATT devices at millimeter-wave frequencies is two orders magnitude higher than that of conventional GaAs and Si IMPATT devices. The simulations showed that GaN wurtzite phase p+n single-drift flat-profile IMPATT oscillators at 300 GHz have efficiency of 11% and r.f. power density of 1.6 MW/cm2 when operated at 800 K.
|Number of pages||4|
|Journal||IEEE MTT-S International Microwave Symposium Digest|
|State||Published - 1 Dec 1999|
|Event||Proceedings of the 1999 IEEE MTT-S International Microwave Symposium Digest 'The Magic Touch of Microwaves' - Anaheim, CA, USA|
Duration: 13 Jun 1999 → 19 Jun 1999