Theoretical analysis of wurtzite and zincblende phase GaN avalanche transit time device in millimeter-wave frequencies

Chin-Chun Meng*, G. R. Liao, J. W. Chen

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

GaN is the suitable material for millimeter-wave high power IMPATT oscillators because of its superior electronic properties - high breakdown electric fields and high electron saturation velocity. In this paper, millimeter-wave wurtzite phase and zincblende phase GaN IMPATT oscillators at elevated temperature are analyzed by a Read type large signal model. The power density of GaN IMPATT devices at millimeter-wave frequencies is two orders magnitude higher than that of conventional GaAs and Si IMPATT devices. The simulations showed that GaN wurtzite phase p+n single-drift flat-profile IMPATT oscillators at 300 GHz have efficiency of 11% and r.f. power density of 1.6 MW/cm2 when operated at 800 K.

Original languageEnglish
Pages (from-to)1777-1780
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Volume4
DOIs
StatePublished - 1 Dec 1999
EventProceedings of the 1999 IEEE MTT-S International Microwave Symposium Digest 'The Magic Touch of Microwaves' - Anaheim, CA, USA
Duration: 13 Jun 199919 Jun 1999

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