The anti-reflection coating(ARC) based on dielectric nanoparticles has been recently proposed as a new way to achieve the low reflectance required for solar cell front surfaces. In this scenario, the Mie modes associated with the dielectric nano-particles are utilized to facilitate photon forward scattering. In this work, versatile designs together with systematically optimized geometry are examined, for the ARCs based on dielectric scatterers. It is found that the Si3N4-TiO2 or SiO2-TiO2 stack is capable of providing low reflectance while maintaining a flat and passivated ARC-semiconductor interface which can be beneficial for reduced interface recombination and prevent VOC degradation associated with topography on the active materials. It is also confirmed that the plasmonic nano-particles placed at the front side of solar cells is not a preferred scheme, even with thorough geometrical optimization. At the ultimate design based on mixed graded index(GI) Mie-scattering, the averaged reflectance can be as low as 0.25%. Such a low reflectance is currently only achievable by ultra-long silicon nano-tips, but silicon nanotips introduce severe surface recombination. On the other hand, the mixed GI Mie design preserves a flat and passivated ARC-silicon interface, with total thickness reduced to 279.8nm, much thinner than 1.6μm for silicon nanotips. In addition, the light trapping capability of mixed GI Mie design is much better than silicon nanotips. In fact, when compared to the state-ofart TiO2 light trapping anti-reflection coating, the mixed GI Mie design provides same light trapping capability while providing much lower reflectance.