The variation of microstructure in Czochralski silicon induced by low-high two step anneal

C. Y. Kung*, C. M. Liu, W. Hsu, Ray-Hua Horng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Systematic low-high two-step and high-low-high three-step annealing studies were conducted to investigate the microdefects generated in Czochralski silicon wafers. It was found that cluster precipitates entangled with dislocations are annihilated during extended low temperature anneal. A model involving the recombination of vacancies with interstitials is proposed to explain this phenomenon.

Original languageEnglish
Pages (from-to)56-59
Number of pages4
JournalJournal of Applied Physics
Volume83
Issue number1
DOIs
StatePublished - 1 Jan 1998

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