The Vacancy Pool Model for Amorphous In-Ga-Zn-O Thin-Film Transistors

Ya-Hsiang Tai, Han Wen Liu, Po Chun Chan*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

In this paper, the reaction rate of oxygen vacancy ( V O ) by the derivatives of threshold voltage ( V th ) in the amorphous indium-gallium-zinc oxide thin-film transistors under light pulses with altering duty ratios is investigated. More importantly, after collecting and analyzing a lot of experimental results, a comprehensive model named V O pool is proposed. The proposed model can more universally describe the characteristic of V O reacting to the light and its degradation behavior under various kinds of stress condition.

Original languageEnglish
Article number8491384
Pages (from-to)52-56
Number of pages5
JournalIEEE Journal of the Electron Devices Society
Volume7
DOIs
StatePublished - 1 Jan 2019

Keywords

  • Amorphous indium gallium zinc oxide (a-IGZO)
  • illumination effect
  • multiple-pulse illumination
  • oxygen vacancy
  • reaction rate
  • response time
  • thin-film transistors (TFTs)

Fingerprint Dive into the research topics of 'The Vacancy Pool Model for Amorphous In-Ga-Zn-O Thin-Film Transistors'. Together they form a unique fingerprint.

Cite this