The use of spatially ordered arrays of etched holes for fabrication of single-mode vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots

A. G. Kuzmenkov*, S. A. Blokhin, N. A. Maleev, A. V. Sakharov, V. G. Tikhomirov, M. V. Maksimov, V. M. Ustinov, A. R. Kovsh, S. S. Mikhrin, N. N. Ledentsov, H. P.D. Yang, Kuo-Jui Lin, R. S. Hsiao, J. Y. Chi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

To suppress the generation of high-order modes in vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots, the method of formation of a spatially ordered array of etched holes in the upper distributed Bragg reflector was used. Single-mode vertical-cavity surface-emitting lasers for spectral region of 990 nm with current-aperture diameter of 20 μm, threshold current 0.9 mA, and maximum output power 3.8 mW at room temperature were demonstrated. Single-mode lasing with the coefficient of side-mode suppression in excess of 35 dB is retained in the entire range of pump currents. A decrease in the current oxide aperture to sizes that are close to those of the optical aperture brings about an increase in the external quantum efficiency; however, in this case, the transition to the multimode of lasing is observed at high pump currents.

Original languageEnglish
Pages (from-to)1224-1229
Number of pages6
JournalSemiconductors
Volume41
Issue number10
DOIs
StatePublished - Oct 2007

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