The understanding of breakdown path in both high-k metal-gate CMOS and resistance RAM by the RTN measurement

Steve S. Chung*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Fingerprint Dive into the research topics of 'The understanding of breakdown path in both high-k metal-gate CMOS and resistance RAM by the RTN measurement'. Together they form a unique fingerprint.

Chemical Compounds

Engineering & Materials Science