The time response of the on-current for the amorphous In-Ga-Zn-O thin film transistor to the illumination pulse

Ya-Hsiang Tai, Chun Yi Chang, Ya Wei Chen, Yi Jung Chen

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

In this study, the time response behavior of the amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) to the illumination pulse is analyzed. The mechanism is proposed to correlate the oxygen vacancy reacting with the light-induced electron-hole pairs. The temperature effect on the time response to the illumination pulse is also studied. The higher excitation level, either from light or temperature, results in the similar excited and recovering behaviors. The formulas for the time response are proposed to be possibly used in the simulation for the circuit performance in real situation of illumination, which is important in the development of transparent electronics using a-IGZO TFT.

Original languageEnglish
Pages (from-to)Q3071-Q3075
JournalECS Journal of Solid State Science and Technology
Volume3
Issue number9
DOIs
StatePublished - 1 Jan 2014

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