The time response for the low-temperature poly-silicon thin-film transistors to x-ray irradiation pulse

Ya Hsiang Tai, Shan Yeh*, Wei Lin Chen, Ting Chang Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

In this study, the time response behavior of low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) to x-ray irradiation pulses with different frequencies is analyzed. The formulas for the time response of excited and recovery behaviors are proposed for possible use in circuit performance enhancement in real x-ray irradiation situations. The predicted and measured results fit fairly well, which is important in the development of x-ray image sensors using LTPS TFTs.

Original languageEnglish
Article number045003
JournalSemiconductor Science and Technology
Volume36
Issue number4
DOIs
StatePublished - Apr 2021

Keywords

  • irradiation pulse
  • low-temperature polycrystalline silicon (LTPS)
  • response time
  • thin-film transistor (TFT)
  • x-ray

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