The thermal stability of ohmic contact to n-type InGaAs layer

J. W. Wu*, C. Y. Chang, K. C. Lin, Edward Yi Chang, J. S. Chen, C. T. Lee

*Corresponding author for this work

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

The thermal stability of ohmic contact to n-type InGaAs layer is investigated. When Ni/Ge/Au is used as the contact metal, the characteristics of the ohmic contact are degraded after thermal treatment. The specific contact resistance of (Ni/Ge/Au)-InGaAs ohmic contact after annealing at 450°C is about 15 times larger than that of as-deposited sample. This is due to the decomposition of InGaAs and the interdiffusion of Ga and Au. A new phase of Au4ln appears after annealing at 300°C. While in the case of Ti/Pt/Au, Au does not penetrate into the InGaAs layer as revealed by secondary ion mass spectroscopy. The specific contact resistance of (Ti/Pt/Au)-InGaAs ohmic contact after annealing at 450°C is eight times larger than that of as-deposited sample. Therefore, the thermal stability of (Ti/Pt/Au)-InGaAs ohmic contact is better than that of (Ni/Ge/Au)InGaAs ohmic contact.

Original languageEnglish
Pages (from-to)79-82
Number of pages4
JournalJournal of Electronic Materials
Volume24
Issue number2
DOIs
StatePublished - 1 Feb 1995

Keywords

  • InGaAs
  • ohmic contact
  • specific contact resistance
  • thermal stability

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