The effects of the DC bias application on the polarization of the antiferroelectric Pb0.09Nb0.02(Zr0.82Sn 0.12 Ti0.04)0.98O3 (PNZST) thin films were studied at room temperature. The antiferroelectric ordering was found to be temporarily destroyed in time scale of approximately one second or less by application of a DC electrical field bias along the surface direction. It was observed that after removing the DC bias, the film relaxed back to the initial antiferroelectric state with a relaxation time of approximately a few thousands of seconds. These behaviors were found to be due to the accumulation of space charges near the film/substrate interface region under DC bias.
|Number of pages||7|
|State||Published - 22 Aug 2005|
|Event||106th Annual Meeting of the American Ceramic Society - Indianapolis, IN, United States|
Duration: 18 Apr 2004 → 21 Apr 2004