The temporal effects in DC-biased PbNb(Zr,Sn,Ti)O3 antiferroelectric thin films

Jiwei Zhai*, H. D. Chen, Eugene V. Colla

*Corresponding author for this work

Research output: Contribution to journalConference article

Abstract

The effects of the DC bias application on the polarization of the antiferroelectric Pb0.09Nb0.02(Zr0.82Sn 0.12 Ti0.04)0.98O3 (PNZST) thin films were studied at room temperature. The antiferroelectric ordering was found to be temporarily destroyed in time scale of approximately one second or less by application of a DC electrical field bias along the surface direction. It was observed that after removing the DC bias, the film relaxed back to the initial antiferroelectric state with a relaxation time of approximately a few thousands of seconds. These behaviors were found to be due to the accumulation of space charges near the film/substrate interface region under DC bias.

Original languageEnglish
Pages (from-to)9-15
Number of pages7
JournalCeramic Transactions
Volume162
StatePublished - 22 Aug 2005
Event106th Annual Meeting of the American Ceramic Society - Indianapolis, IN, United States
Duration: 18 Apr 200421 Apr 2004

Fingerprint Dive into the research topics of 'The temporal effects in DC-biased PbNb(Zr,Sn,Ti)O<sub>3</sub> antiferroelectric thin films'. Together they form a unique fingerprint.

  • Cite this