The synthesis of diamond films on adamantane-coated Si substrate at low temperature

Rajanish N. Tiwari*, Jitendra N. Tiwari, Li Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

15 Scopus citations

Abstract

Diamond films have been synthesized on the adamantane-coated Si (1 0 0) substrate by microwave plasma chemical vapor deposition from a gaseous mixture of methane and hydrogen gases with a growth rate of ∼6.7 nm/min. The substrate temperature was ∼475 °C during diamond deposition. The films obtained have good crystallinity that is characterized by scanning electron microscopy and Raman spectrometry. X-ray photoelectron spectroscopy analysis has confirmed that diamond nucleation and growth are on SiC rather than clean Si. The possible mechanism of high rate growth diamond films has been demonstrated.

Original languageEnglish
Pages (from-to)641-645
Number of pages5
JournalChemical Engineering Journal
Volume158
Issue number3
DOIs
StatePublished - 15 Apr 2010

Keywords

  • Adamantane
  • Diamond
  • MPCVD

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