The suppressed negative bias illumination-induced instability in In-Ga-Zn-O thin film transistors with fringe field structure

Yu Chun Chen, Ting Chang Chang*, Hung Wei Li, Tien Yu Hsieh, Te Chih Chen, Chang Pei Wu, Cheng Hsu Chou, Wang Cheng Chung, Jung Fang Chang, Ya-Hsiang Tai

*Corresponding author for this work

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Abstract

This study investigates the suppressed negative gate bias illumination stress (NBIS) -induced instability of via-type amorphous indium-gallium-zinc- oxide (a-IGZO) thin film transistors (TFTs) with fringe field (FF) structures. The less negative threshold voltage shifts of devices after NBIS are showed when device has larger FF structures. This finding is attributed to more dispersive distribution of photo-generated holes in the width direction of a-IGZO during NBIS, which reduce the hole trapping phenomenon in the front channel interface. The a-IGZO TFT with FF structure is expected to be an effective method to increase the electrical reliability of devices after NBIS.

Original languageEnglish
Article number223502
JournalApplied Physics Letters
Volume101
Issue number22
DOIs
StatePublished - 26 Nov 2012

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    Chen, Y. C., Chang, T. C., Li, H. W., Hsieh, T. Y., Chen, T. C., Wu, C. P., Chou, C. H., Chung, W. C., Chang, J. F., & Tai, Y-H. (2012). The suppressed negative bias illumination-induced instability in In-Ga-Zn-O thin film transistors with fringe field structure. Applied Physics Letters, 101(22), [223502]. https://doi.org/10.1063/1.4767996