As a result of the rapid development of lithography, it enables semiconductor technology to design more devices in the same area, which therefore makes electronic products faster, more functional, and hold more components. The photoresist, playing an important role in lithography, constantly develops with a light wavelength used for exposure from early entire wavelengths to present optical and non-optical lithography. The light sources of optical lithography have moved from the early 436nm and 365nm wavelength to short-wavelength light gradually. It is a big issue to find a suitable photoresist under the exposure of 0.578nm X-Ray light source. In this paper we first proposed to use DNQ / Novolak photoresist sold in the market for the 0.578nm X-Ray lithography. In the experiment, it is discovered that the exposure amount of X-Ray can determine if the photoresist is positive or negative; in low doses, when the photoresist film thickness is increased with the reduced exposure time, and a critical level is reached, the Novolak liquid will become positive photoresist after it is exposed in certain time. The high-dose X-Ray beam will make Novolak resin bond break and result in free radicals, which, through resin crosslinking, can improve the internal strength, and reduce developer solubility so the Novolak liquid can become a negative photoresist. By using synthesized DNQ / Novolak photoresist under X-Ray exposure, we can reduce the process line width, and explore principles of photoresist imaging analysis under the different exposure doses.
|Number of pages||9|
|Journal||Advances in Information Sciences and Service Sciences|
|State||Published - 1 Oct 2012|
- Photo microlithography