The study of high breakdown voltage vertical gan-on-gan p-i-n diode with modified mesa structure

Wen Chieh Ho, Yao Hsing Liu, Wen Hsuan Wu, Sung Wen Huang Chen, Jerry Tzou, Hao-Chung Kuo*, Chia-Wei Sun

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

In this paper, we fabricated Gallium Nitride (GaN) vertical p-i-n diodes grown on free-standing GaN (FS-GaN) substrates. This homogeneous epitaxy led to thicker GaN epi-layers grown on the FS-GaN substrate, but a high crystalline quality was maintained. The vertical GaN p-i-n diode showed a low specific on-resistance of 0.85 mΩ-cm2 and high breakdown voltage (BV) of 2.98 kV. The high breakdown voltage can be attributed to the thick GaN epi-layer and corresponds to the mesa structure. Improvement of the device characteristics by the mesa structure was investigated using device simulations. We proved that a deeper mesa depth is able to decrease the electric field at the bottom of the mesa structure. Furthermore, a smaller mesa bevel angle will assist the BV up to 2.98 kV at a 60 bevel angle. Our approach demonstrates structural optimization of GaN vertical p-i-n diodes is useful to improve the device performance.

Original languageEnglish
Article number712
Pages (from-to)1-12
Number of pages12
JournalCrystals
Volume10
Issue number8
DOIs
StatePublished - Aug 2020

Keywords

  • FS-GaN substrate
  • Gallium Nitride (GaN)
  • Vertical diode
  • Vertical p-i-n diodes

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