The study of compensative structure assisted convex and concave corner structures etching by inductively coupled plasma-reactive ion etch (ICP-RIE)

Yu Hsin Lin*, Yuan Chieh Cheng, Nien Nan Chu, Wen-Syang Hsu, Yu Hsiang Tang, Po Li Chen, Chih Chung Yang, Ming Hua Hsiao, Chien Nan Hsiao

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, the compensative structure assisted the convex and concave corner structures etch in inductively coupled plasma reactive ion etch (ICP-RIE) have been studied. In anisotropic silicon etching, under the Bosch patent, sequentially alternating etch and passivation cycles can easily achieve high aspect ratio silicon structures. But, the feature size of the convex and concave corner structures are difficult to maintain as original design at the bottom position in deep etch, due to non-vertical movement plasma etch. A compensative structure can obstruct the non-vertical plasma to etch the convex corner structures and reduce the etch lag effect during the etch process leading to better profile at deep etch. The current study systematically investigates plasma condition to verify feasibility of the proposed method, and discusses effect of the gap between compensative structure and convex and concave corner structures at three different gaps of 15, 10, 5μm. It demonstrate the compensative structure with small gap in front of the convex and concave corner structures have better profile at deep ICP-RIE etching.

Original languageEnglish
Title of host publication2015 IEEE 10th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages491-493
Number of pages3
ISBN (Electronic)9781467366953
DOIs
StatePublished - 1 Jul 2015
Event10th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015 - Xi'an, China
Duration: 7 Apr 201511 Apr 2015

Publication series

Name2015 IEEE 10th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015

Conference

Conference10th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015
CountryChina
CityXi'an
Period7/04/1511/04/15

Keywords

  • compensative
  • Convex and concave corner structures
  • Inductively-Coupled-Plasma Reactive-Ion-Etch (ICP-RIE)

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    Lin, Y. H., Cheng, Y. C., Chu, N. N., Hsu, W-S., Tang, Y. H., Chen, P. L., Yang, C. C., Hsiao, M. H., & Hsiao, C. N. (2015). The study of compensative structure assisted convex and concave corner structures etching by inductively coupled plasma-reactive ion etch (ICP-RIE). In 2015 IEEE 10th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015 (pp. 491-493). [7147475] (2015 IEEE 10th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NEMS.2015.7147475