The structure of GaN-based transverse junction blue LED array for uniform distribution of injected current/carriers

Jin Wei Shi*, Shi Hao Guol, C. S. Lin, Jinn Kong Sheu, Kuo Hua Chang, W. C. Lai, Cheng-Huang Kuo, C. J. Tun, Jen Inn Chyi

*Corresponding author for this work

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

In this study, we demonstrate a GaN-based transverse junction blue LED array. This device was realized by the regrowth of n-type GaN layers on the sidewall of p-type GaN and undoped multiple quantum wells (MQWs). Due to the transverse flow of injection carriers, problems related to nonuniform current distribution, nonuniform carrier distribution among different MQWs, and bias-dependent shape of the electroluminescence spectra such as that occurring in traditional GaN-based blue LEDs with vertical p-n junctions and large active area (<1 mm2) are all greatly minimized in our structure.

Original languageEnglish
Article number4957079
Pages (from-to)1292-1297
Number of pages6
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume15
Issue number4
DOIs
StatePublished - 21 May 2009

Keywords

  • GaN LEDs
  • White light generation

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