The structural and electrical comparison of Y 2 O 3 and Ti-doped Y 2 O 3 dielectrics

Ming Ling Lee, Chyuan Haur Kao*, Hsiang Chen, Chan Yu Lin, Yu Teng Chung, Kow-Ming Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


A Ti-doped Y 2 O 3 (Y 2 Ti 2 O 5 ) dielectric on polycrystalline silicon followed by rapid thermal annealing results in improved characteristics including a higher effective dielectric constant, higher breakdown electric field, lower electron trapping rate, and larger charge-to-breakdown when compared with Y 2 O 3 . The performance of high-k Y 2 O 3 and Y 2 Ti 2 O 5 dielectrics were investigated using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), capacitance-voltage, and current density-voltage. Incorporating Ti into the Y 2 O 3 dielectric imparts improvements in the structural and electrical performance of the material. The Y 2 Ti 2 O 5 dielectric with 800 °C annealing treatment has the best performance among all the samples tested.

Original languageEnglish
Pages (from-to)3043-3050
Number of pages8
JournalCeramics International
Issue number3
StatePublished - 15 Feb 2017


  • Ti-doped
  • Y2O3
  • Y2Ti2O5

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