The strain effects on flexible a-Si:H TFTs

Li Feng Teng*, Po-Tsun Liu, Shang Yao Tsai, I. Hsuan Peng, Yi Teh Chou

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The effects of the uniaxial mechanical strain stress on hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) were studied in this work. The proposed a-Si TFTs were fabricated on thin steel foil, and all process temperature was well-controlled below 200°C. The threshold voltage (V th) metastability was discussed by applying DC bias stress on gate electrode. The tensile strain was imposed on the device parallel to the source-drain current path, and all electrical parameters were extracted from saturation region. Our results indicated both outward and inward strain stress can lead to an un-recoverable destruction on a-Si:H TFTs at the first time. Even if the TFTs devices were re-flattened to plane, the transfer characteristic didn't recover and had larger V th variation than the consequent bending performance. This phenomenon was related to the disorder of amorphous silicon structure. We provide a model and used activation energy to explain this effect.

Original languageEnglish
Title of host publicationECS Transactions - Thin Film Transistors 9, TFT 9
Pages333-337
Number of pages5
Edition9
DOIs
StatePublished - 1 Dec 2008
EventThin Film Transistors 9, TFT 9 - 214th ECS Meeting - Honolulu, HI, United States
Duration: 13 Oct 200816 Oct 2008

Publication series

NameECS Transactions
Number9
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceThin Film Transistors 9, TFT 9 - 214th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period13/10/0816/10/08

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