The static and dynamic behaviors of resistive random access memory and its potential applications as a memristor

Steve S. Chung, Y. H. Tseng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

In this paper, the static and dynamic switching characteristics of Ti/HfO 2 /TiN resistive random access memory (RRAM) have been examined. Based on the experimental results, several pertinent device characteristics can be developed, which include a tunneling barrier width model to explain the RRAM switching behaviors, and the ac transient switching characteristics for circuit model development. We also investigated the potential applications of RRAM as a memristor for both digital and analog circuit design, and discuss the feasibilities and problems to be solved.

Original languageEnglish
Title of host publicationICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Pages1069-1072
Number of pages4
DOIs
StatePublished - 1 Dec 2010
Event2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
Duration: 1 Nov 20104 Nov 2010

Publication series

NameICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Conference

Conference2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
CountryChina
CityShanghai
Period1/11/104/11/10

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    Chung, S. S., & Tseng, Y. H. (2010). The static and dynamic behaviors of resistive random access memory and its potential applications as a memristor. In ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 1069-1072). [5667547] (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings). https://doi.org/10.1109/ICSICT.2010.5667547