The side effects of sidewall polyoxide and spacer bottom oxide on the submicron high dielectric spacer Ldd Mosfet's

Jyh-Chyurn Guo, P. S. Lin, C. C.H. Hsu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

LDD MOSFET's with a high dielectric spacer has been proposed to improve the devices' performance El]. This improvement is attributed to the conductivity modulation effect on the the lightly doped source/drain region from enhanced fringe field through high dielectric spacer. However, to reduce the stress of high dielectric spacer on the silicon, the oxide layers on Si and poly-Si are not etched compIetely before the spacer deposition. In this paper these two oxide layers are called the spacer bottom oxide and the sidewall poly oxide ,respectively. By using the 2-0 device simulator 1121, we have comprehensively studied the impact of sidewall poly oxide and spacer bottom oxide on the driving current capability of sub-pm LDD MOSFET's. For the first-time, we report that reducing thickness of sidewall poly oxide and spacer bottom oxide will improve the devices' performance significantly, as the MOSFETgate length scales down to sub-0.5μm regime.

Original languageEnglish
Title of host publicationSMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages33-34
Number of pages2
ISBN (Electronic)0780312252, 9780780312258
DOIs
StatePublished - 1 Jan 1993
Event1993 Symposium on Semiconductor Modeling and Simulation, SMS 1993 - Taipei, Taiwan
Duration: 6 Mar 19937 Mar 1993

Publication series

NameSMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation

Conference

Conference1993 Symposium on Semiconductor Modeling and Simulation, SMS 1993
CountryTaiwan
CityTaipei
Period6/03/937/03/93

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    Guo, J-C., Lin, P. S., & Hsu, C. C. H. (1993). The side effects of sidewall polyoxide and spacer bottom oxide on the submicron high dielectric spacer Ldd Mosfet's. In SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation (pp. 33-34). [664540] (SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMS.1993.664540