The role of the interface structure on the growth of nonpolar (10 1 ̄ 0) and semipolar (11 2 ̄ 2 ̄) ZnO on (112) LaAlO3 substrates

Jr Sheng Tian, Yue Han Wu, Wei Lin Wang, Tzu Chun Yen, Yen Teng Ho, Li Chang*

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

Growth of nonpolar (101̄0) and semipolar (112̄ 2̄) ZnO on (112) LaAlO3 (LAO) substrates can be obtained by annealing the substrate surface in vacuum and oxygen ambient conditions prior to ZnO deposition, respectively. We investigated the origin of the two different growth relationships by inspecting their interface in atomic scale using high angle annular dark field scanning transmission electron microscopy. (101̄0) ZnO was grown on flat (112)LAO surface due to the similar atomic configurations and small lattice mismatch between them at the interface, and (112̄ 2̄) ZnO was grown on a faceted surface with (001)LAO and (110)LAO facets on which accommodation growth of both (112̄0) ZnO and (0001̄) ZnO are consistent with [11̄00] ZnO//[11̄0]LAO.

Original languageEnglish
Pages (from-to)237-239
Number of pages3
JournalMaterials Letters
Volume109
DOIs
StatePublished - 26 Aug 2013

Keywords

  • Epitaxial growth Interfaces LaAlO ZnO
  • Structural

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