The role of Si interstitials in the migration and growth of Ge nanocrystallites under thermal annealing in an oxidizing ambient

Kuan Hung Chen, Ching Chi Wang, Tom George, Pei-Wen Li*

*Corresponding author for this work

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

We report a unique growth and migration behavior of Ge nanocrystallites mediated by the presence of Si interstitials under thermal annealing at 900°C within an H2O ambient. The Ge nanocrystallites were previously generated by the selective oxidation of SiGe nanopillars and appeared to be very sensitive to the presence of Si interstitials that come either from adjacent Si3N4 layers or from within the oxidized nanopillars. A cooperative mechanism is proposed, wherein the Si interstitials aid in both the migration and coarsening of these Ge nanocrystallites through Ostwald ripening, while the Ge nanocrystallites, in turn, appear to enhance the generation of Si interstitials through catalytic decomposition of the Si-bearing layers.

Original languageEnglish
Pages (from-to)1-5
Number of pages5
JournalNanoscale Research Letters
Volume9
Issue number1
DOIs
StatePublished - 1 Jan 2014

Keywords

  • Annealing
  • Germanium nanocrystallites
  • Migration

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