The role of high-κTiHfO gate dielectric in sputtered ZnO thin-film transistors

Nai Chao Su*, Shui Jinn Wang, Chin Chuan Huang, Yu Han Chen, Hao Yuan Huang, Chen Kuo Chiang, Chien Hung Wu, Albert Chin

*Corresponding author for this work

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

In this study, we demonstrate the role of a titanium hafnium oxide (TiHfO) gate dielectric in improving the overall electronic performance of a ZnO thin-film transistor (TFT). Tix Hf1-xO (x =0:63) was fabricated by the rf co-sputtering technique. Using TiHfO as the gate dielectric, the device fabricated in this study exhibits a threshold voltage of 0.34 V, a subthreshold swing of 0.23 V/dec, a field-effect mobility of 2.1cm2 V-1 s-1, and an ON/OFF current ratio of 105. The small subthreshold swing and low positive threshold voltage are attributed to the higher value of k of 40 for the dielectric. This result enables device operation below 2 V, allowing its use in low-power driving circuits in display applications.

Original languageEnglish
Article number04DA12
JournalJapanese journal of applied physics
Volume49
Issue number4 PART 2
DOIs
StatePublished - 1 Apr 2010

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    Su, N. C., Wang, S. J., Huang, C. C., Chen, Y. H., Huang, H. Y., Chiang, C. K., Wu, C. H., & Chin, A. (2010). The role of high-κTiHfO gate dielectric in sputtered ZnO thin-film transistors. Japanese journal of applied physics, 49(4 PART 2), [04DA12]. https://doi.org/10.1143/JJAP.49.04DA12