The Reverse Anneal of Junction Characteristics in Forming Shallow p+-n Junction by BF2+ Implantation into Thin Co Films on Si Substrate

M. H. Juang, Huang-Chung Cheng

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

Silicided shallow p+-n junctions, formed by BF2+ implantation into thin Co films on Si substrates and subsequently annealed, show a reverse anneal of junction characteristics in the temperature range between 550 and 600°C. The reverse anneal means a behavior showing the degradation of considered parameters with increasing anneal temperature. A higher implant dosage causes a more distinct reverse anneal. The reverse anneal of electrical characteristics was associated with the reverse anneal of substitutional boron. A shallow p+-n junction with a leakage current density lower than 3 nA/cm2, a forward ideality factor better than 1.01, and a junction depth of about 0.1 μm was therefore achieved by just a 550°C anneal.

Original languageEnglish
Pages (from-to)220-222
Number of pages3
JournalIEEE Electron Device Letters
Volume13
Issue number4
DOIs
StatePublished - 1 Jan 1992

Fingerprint Dive into the research topics of 'The Reverse Anneal of Junction Characteristics in Forming Shallow p<sup>+</sup>-n Junction by BF2<sup>+</sup> Implantation into Thin Co Films on Si Substrate'. Together they form a unique fingerprint.

  • Cite this