The resistive switching characteristics of a Ti/Gd2O3/Pt RRAM device

Kou Chen Liu*, Wen Hsien Tzeng, Kow-Ming Chang, Yi Chun Chan, Chun Chih Kuo, Chun Wen Cheng

*Corresponding author for this work

Research output: Contribution to journalArticle

42 Scopus citations

Abstract

We successfully fabricated the Gd2O3 film for the application of resistive random access memory (RRAM). The resistive switching behavior of the Ti/Gd2O3/Pt capacitor structure could be both operated under positive or negative bias. However, there was a significant difference on the switching properties. The switching behavior under positive bias operation was more stable, had less voltage and resistance fluctuation, and had longer endurance than that of the negative one. We propose that the anode electrode plays an important role in the switching characteristics and may be the cause of the asymmetry of the I-V curves between positive and negative operation.

Original languageEnglish
Pages (from-to)670-673
Number of pages4
JournalMicroelectronics Reliability
Volume50
Issue number5
DOIs
StatePublished - 1 May 2010

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